Advanced MOS Device Physics by Norman G. Einspruch PDF

By Norman G. Einspruch

ISBN-10: 0122341015

ISBN-13: 9780122341014

ISBN-10: 012234118X

ISBN-13: 9780122341182

Includes contributions from a dozen execs from the inner most area and academia. Discusses numerous machine physics issues of specific curiosity to and college researchers in electric engineering, laptop technological know-how, and digital fabrics. Emphasizes actual description, mode

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H. Q. Su, C. C. Wei, and T. P. Ma, Mobility degradation in very thin oxide p-channel MOSFETs. IEEE Trans. Electron Devices ED-32, 559 (1985). 23. K. K. Hung, Electrical characterization of the S i - S i 0 2 interference for thin oxides. Doctoral Thesis, Hong Kong University (1987). 24. K. Y. Toh, P. K. Ko, and R. G. Meyer, An engineering model for short-channel MOS devices. IEEE J. Solid-State Circuits (to be published). 25. C. G. Sodini, T. Ekstedt, and J. Moll, Charge accumulation and mobility in thin dielectric MOS transistors.

M. Fukuma and Y. Okuto, Analysis of the short-channel MOSFETs with field-dependent carrier drift mobility. IEEE Trans. Electron Devices ED-27, 2109-2114 (1980). 41. Y. A. El Mansy and A. R. Boothroyd, A simple two-dimensional model for IGFET operation in the saturation region. IEEE Trans. Electron Devices ED-24(3), 254-262 (1977). 1. Approaches to Scaling 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 37 P. K. Ko, R. S. Muller, and C. Hu, A unified model for hot-electron currents in MOSFETs. Tech.

Are the same for both types of device. The structure of a depletion-mode N M O S transistor is shown in Fig. 7. Two depletion regions are shown in the device channel. The first is associated with the p-n junction and the second is supported by the gate bias. If those depletion regions do not meet, then at low drain bias a continuous «-type exists between the n source and drain; that is, the device will conduct. As the drain bias increases, the potential d r o p along the channel causes the depletion regions to widen, as shown in Fig.

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Advanced MOS Device Physics by Norman G. Einspruch

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